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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION *With TO-220Fa package *High breakdown voltage *High speed switching APPLICATIONS *Switching regulator and high voltage switching applications *High speed DC-DC converter applications PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter 2SC3559 * Fig.1 simplified outline (TO-220Fa) and symbol Absolute maximum ratings (Ta=25) SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-Peak Base current TC=25 PC Collector power dissipation Ta=25 Tj Tstg Junction temperature Storage temperature 2 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE 900 800 7 3 5 1 30 W UNIT V V V A A A Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO VCEsat VBEsat ICBO IEBO hFE PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=10mA , IB=0 IC=1mA , IE=0 IC=0.8A; IB=0.16A IC=0.8A; IB=0.16A VCB=800V; IE=0 VEB=7V; IC=0 IC=0.8A ; VCE=5V 10 MIN 800 900 TYP. 2SC3559 MAX UNIT V V 0.6 1.2 0.1 1.0 V V mA mA Switching times tr ts tf Rise time Storage time Fall time IB1=0.08A; IB2=-0.2A VCC400V; RL=500 1.0 4.0 1.0 s s s 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3559 Fig.2 Outline dimensions (unindicated tolerance:0.15 mm) 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3559 4 |
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